Maqola

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

E. E. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE. B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, Russia

2020en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.jallcom.2020.155470

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