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Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform

Hongye YuanState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaYuanquan HuangState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaTiancheng GongState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaYuan WangState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaPengfei JiangState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaWei WeiState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaYang YangState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaJunshuai ChaiState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaZhicheng WuState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaXiaolei WangState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaMing LiuState Key Laboratory of Fabrication Technologies for Integrated Circuits and the Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2024en

ABI

Annotatsiya

Hafnium-based Ferroelectric Field-Effect Transistors (FeFETs) suffer from limited endurance. In-depth understanding of the trap behaviour during failure process is crucial for endurance improvement. In this work, aiming at the characteristics of FeFETs, Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique is optimized and an advanced trap characterization platform based on newly optimized TSCIS method combined with Low Frequency Noise (LFN) and C-V characteristics for resolving spatial and energetic distribution of traps in FeFETs is developed. Furthermore, through this advanced trap characterization platform, the trap behaviours of nitridation/non-nitridation FeFETs during endurance process are characterized and compared in detail. The improvement of interface quality by nitridation is finally confirmed from the defect level.

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Identifikatorlar

DOI: 10.1109/led.2024.3469372

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