Maqola

High-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts

Hui FangBerkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United StatesSteven S.C. ChuangBerkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United StatesTing Chia ChangElectrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United StatesKuniharu TakeiBerkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United StatesToshitake TakahashiBerkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United StatesAli JaveyBerkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, United States

2012en

ABI

Annotatsiya

We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO(2) chemisorption on WSe(2). The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.1021/nl301702r

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar