Excitation Intensity Dependent Studies of Photoluminescence from ZnO Nanocrystals Deposited on Different Substrates
Saidislam KurbanovQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, KoreaKhusan T. IgamberdievQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, KoreaSh. U. YuldashevQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, KoreaTae Won KangQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea
2009en
ABI
Annotatsiya
The photoluminescence (PL) spectra of ZnO nanocrystals depending on temperature, excitation intensity, and deposited substrate were studied. At a constant cooled cryostat finger temperature of 10 K, under high-power excitation density (He–Cd laser, 325 nm), a temperature induced redshift and distortion of the PL from ZnO nanocrystals deposited on silicon, sapphire, and glass substrates were observed. The effect of the substrate and interface thermal conductance on the observed phenomenon is discussed.
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