Synthesis and Fabrication of High‐Performance n‐Type Silicon Nanowire Transistors
Gengfeng ZhengDepartment of Chemistry and Chemical Biology, Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USAWei LüDepartment of Chemistry and Chemical Biology, Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USASong JinDepartment of Chemistry and Chemical Biology, Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USACharles M. Lieber
2004en
ABI
Annotatsiya
Single crystal n-type silicon nanowires (SiNWs) with controlled phosphorus dopant concentrations have been successfully synthesized for the first time (see Figure). Field-effect transistor (FET) devices fabricated from these n-SiNWs exhibit good device properties, with mobilities more than 100 times greater than previous reports, and comparable to high-performance planar silicon FETs.
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