Hall effect and resistivity of high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="italic">T</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>oxides in the bipolaron model

We discuss the Hall effect and resistivity above ${\mathit{T}}_{\mathit{c}}$, using a variant of the bipolaron theory which takes into account Anderson localization of the bosons by disorder. The model supposes that ${\mathit{R}}_{\mathit{H}}$=1/2${\mathit{en}}_{\mathit{b}}$c, where ${\mathit{n}}_{\mathit{b}}$ is the number of delocalized carriers. Temperature and doping dependences of \ensuremath{\rho}, ${\mathit{R}}_{\mathit{H}}$, cot${\mathrm{\ensuremath{\theta}}}_{\mathit{H}}$, and the ``spin'' gap in ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ are explained.

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