Positron lifetimes in GaAs
L. J. ChengDepartment of Physics and Institute for the Study of Defects in Solids, State University of New York at Albany, Albany, New York 12222James P. KarinsDepartment of Physics and Institute for the Study of Defects in Solids, State University of New York at Albany, Albany, New York 12222J. W. CorbettDepartment of Physics and Institute for the Study of Defects in Solids, State University of New York at Albany, Albany, New York 12222Lionel C. Kimerling
1979en
ABI
Annotatsiya
The suitability of the positron-lifetime technique to the study of native vacancies in GaAs is demonstrated. Significant variations in positron lifetime among a variety of as-grown GaAs single crystals were observed. The longest positron lifetime was found in undoped samples. Annealing in vacuum at 300–500 °C reduced the long-lifetime component. The results present strong evidence for the existence of Ga vacancies in the as-grown material.
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