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Ish: Defects in Irradiated Silicon. II. Infrared Absorption of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center

1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

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2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

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