Twin-induced phase transition from β-Ga<sub>2</sub>O<sub>3</sub> to α-Ga<sub>2</sub>O<sub>3</sub> in Ga<sub>2</sub>O<sub>3</sub> thin films
Byeongdae ChoiIntelligent Devices and Systems Research Group, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873, KoreaBunyod AllabergenovDepartment of Transport Systems, Urgench State University (USU), Urgench 220100, UzbekistanHong‐Kun LyuIntelligent Devices and Systems Research Group, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873, KoreaSeong Eui LeeDepartment of Advanced Materials, Korea Polytechnic University, Siheung, Gyeonggi 15073, Korea
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Annotatsiya
We deposited a 300-nm-thick Ga2O3 thin film on an amorphous SiO2/Si substrate via pulsed laser deposition. X-ray diffraction patterns revealed the formation of β-Ga2O3 phase at a substrate temperature of 700 °C. X-ray photoelectron spectra indicated that the degree of oxidation increased after annealing at 700 °C. Further annealings at higher temperatures led to a transition of the β-Ga2O3 phase to the α-Ga2O3 phase; this transition was caused by the twin structure formed during the crystallinity improvement process. In addition, we discuss the mechanism of the transition from the β phase to the α phase in the β-Ga2O3 thin films.
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