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Identifying the Cause of Voltage and Fill Factor Losses in Perovskite Solar Cells by Using Luminescence Measurements

Nandi WuCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaYiliang WuCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaDaniel WalterCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaHeping ShenCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaThe DuongCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaDale GrantCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaChog BarugkinCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaXiao FuCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaJun PengCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaThomas P. WhiteCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaKylie CatchpoleCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT AustraliaKlaus WeberCollege of Engineering and Computer Science The Australian National University Building 32, North Road Canberra ACT Australia
2017en
ABI

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Abstract The open‐circuit voltage ( V OC ) and fill factor are key performance parameters of solar cells, and understanding the underlying mechanisms that limit these parameters in real devices is critical to their optimization. Device modeling is combined with luminescence and cell current–voltage ( I – V ) measurements to show that carrier transport limitations within the cell can significantly reduce the cell voltage around the maximum power point as well as, under certain conditions, at V OC . An important consequence is that the cell terminal voltage cannot be assumed a priori to be only limited by parasitic recombination. It is demonstrated that luminescence‐based measurements can be used to reconstruct cell I – V curves with removal of any transport limitation effects, which allows the contribution of recombination, shunt resistance, and series resistance on the fill factor to be clarified. Such luminescence‐based measurements allow the contactless characterization of cells and cell precursor structures, and should prove highly valuable as a diagnostic tool for the development of new cell structures and large‐area cells.

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