Lateral photoconductivity of AlGaAs/InGaAs structures with quantum wells and self-organized quantum dots under interband illumination
O. A. ShegaǐInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaA. K. BakarovInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaA. K. KalaginInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaA. I. ToropovInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia
2005en
ABI
Annotatsiya
The results of studying the special features of the dependence of lateral photoconductivity in AlGaAs/InGaAs structures with quantum dots and quantum wells on the intensity of interband light at low temperatures are reported. It is found that there is a threshold for the increase in photoconductivity. Oscillations of photoconductivity are observed at relatively high pulling fields. The effects of the pulling field and temperature on the photoconductivity are studied. The results are analyzed in terms of the theory of percolation of nonequilibrium charge carriers over localized states, taking into account the relaxation of stresses around quantum dots.
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