Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys
П. В. СерединVoronezh State University, Voronezh, 394006, Russia�. P. DomashevskayaVoronezh State University, Voronezh, 394006, RussiaI. N. ArsentyevIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaD. A. VinokurovIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaA. L. StankevichIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaT. PrutskijInstituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No. 3417, Col San Miguel Huyeotlipan, Puebla, 72050, Mexico
2013en
ABI
Annotatsiya
Epitaxial heterostructures produced on the basis of Al x Ga1 − x As and Ga x In1 − x P ternary alloys by metal-organic chemical vapor deposition are studied. The composition parameter x of the alloys was ∼0.50. By X-ray diffraction studies, scanning electron microscopy, atomic force microscopy, and photoluminescence spectroscopy, it is shown that superstructured ordered phases with the stoichiometry composition III1 − ηIII1 + ηV2 can be formed. As a consequence of this effect, not only does the cubic crystal symmetry change to the tetragonal type in the new compound, but also the optical properties become different from those of disordered alloy with the same composition.
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