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Nanostructured Bulk Silicon as an Effective Thermoelectric Material

Sabah K. BuxDepartment of Chemistry and Biochemistry and California NanoSystems Institute University of California, Los Angeles 607 Charles E. Young Drive, Box 951569, Los Angeles, CA 90095 (USA)Richard G. BlairDepartment of Chemistry, University of Central Florida 4000 Central Florida Boulevard, Chemistry Building (CH) 117 Orlando, FL 32816 (USA)P. GognaPower and Sensor Systems Group Jet Propulsion Laboratory/California Institute of Technology 4800 Oak Grove Drive, MS 277-207, Pasadena, CA 91109 (USA)Hohyun LeeMassachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 (USA)Gang ChenMassachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 (USA)M. S. DresselhausMassachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 (USA)Richard B. KanerDepartment of Chemistry and Biochemistry and California NanoSystems Institute University of California, Los Angeles 607 Charles E. Young Drive, Box 951569, Los Angeles, CA 90095 (USA)Jean‐Pierre FleurialPower and Sensor Systems Group Jet Propulsion Laboratory/California Institute of Technology 4800 Oak Grove Drive, MS 277-207, Pasadena, CA 91109 (USA)
2009en
ABI

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Abstract Thermoelectric power sources have consistently demonstrated their extraordinary reliability and longevity for deep space missions and small unattended terrestrial systems. However, more efficient bulk materials and practical devices are required to improve existing technology and expand into large‐scale waste heat recovery applications. Research has long focused on complex compounds that best combine the electrical properties of degenerate semiconductors with the low thermal conductivity of glassy materials. Recently it has been found that nanostructuring is an effective method to decouple electrical and thermal transport parameters. Dramatic reductions in the lattice thermal conductivity are achieved by nanostructuring bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single‐crystal material. This makes nanostructured bulk (nano‐bulk) Si an effective high temperature thermoelectric material that performs at about 70% the level of state‐of‐the‐art Si 0.8 Ge 0.2 but without the need for expensive and rare Ge.

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