The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition

The magnetoresistance of heavily doped Ge:As near the metal-insulator phase transition has been studied both on the metal and insulator sides of the transition. Measurements were made at microwave frequencies using a noncontact technique of electron spin resonance. The field and temperature dependences of the magnetoresistance derivative in metallic samples reveal two main features of the phenomenon: a negative magnetoresistance at weak fields, due to the weak localization effect, and a positive magnetoresistance at strong fields, arising from the electron-electron interaction in the diffusion channel. Only a weak negative magnetoresistance with a characteristic low-field behavior is observed in insulating samples. The results are compared with the theory of quantum corrections.

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