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Entropy spikes as a signature of Lifshitz transitions in the Dirac materials

Viacheslav TsaranInstitut für Kernphysik, Johannes Gutenberg Universität, D-55128, Mainz, GermanyA. V. KavokinCNR-SPIN, University "Tor Vergata", Viale del Politecnico 1, I-00133, Rome, ItalyS G SharapovBogolyubov Institute for Theoretical Physics, National Academy of Science of Ukraine, 14-b Metrolohichna Street, Kiev, 03680, Ukraine. [email protected]A. A. VarlamovCNR-SPIN, University "Tor Vergata", Viale del Politecnico 1, I-00133, Rome, ItalyV. P. GusyninBogolyubov Institute for Theoretical Physics, National Academy of Science of Ukraine, 14-b Metrolohichna Street, Kiev, 03680, Ukraine
2017en
ABI

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We demonstrate theoretically that the characteristic feature of a 2D system undergoing N consequent Lifshitz topological transitions is the occurrence of spikes of entropy per particle s of a magnitude ±ln2/(J - 1/2) with 2 ≤ J ≤ N at low temperatures. We derive a general expression for s as a function of chemical potential, temperature and gap magnitude for the gapped Dirac materials. Inside the smallest gap, the dependence of s on the chemical potential exhibits a dip-and-peak structure in the temperature vicinity of the Dirac point. The spikes of the entropy per particles can be considered as a signature of the Dirac materials. These distinctive characteristics of gapped Dirac materials can be detected in transport experiments where the temperature is modulated in gated structures.

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