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Single-Layer MoS<sub>2</sub>Phototransistors

Zongyou YinSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Hai LiSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Hong LiSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Lin JiangSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Yumeng ShiSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Yinghui SunSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Gang LuSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Qing ZhangSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Xiaodong ChenSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798Hua ZhangSchool of Materials Science and Engineering and ‡School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

2011en

ABI

Annotatsiya

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

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Identifikatorlar

DOI: 10.1021/nn2024557

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