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Ish: Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

1. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

   Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

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   ABIABI:AkademIndex/openalex/2026.other.381998

2. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 iqtibos

   ABIABI:AkademIndex/openalex/2013.article.000107