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Ish: Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

1. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

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   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 iqtibos

   ABIABI:AkademIndex/openalex/2013.article.000107