Asymmetric q-Gaussian functions to fit the Raman LO mode band in Silicon Carbide

Previous studies (Sparavigna, 2023) have demonstrated the Tsallis q-Gaussian functions suitable for the analysis of Raman spectra. The q-Gaussians are symmetric functions that can be used for simulating different line shapes of Raman bands. Here we use two asymmetric forms of the q-Gaussians, to fit the Raman LO mode band of Silicon Carbide. The first form considered is the generalization of the Breit-Wigner-Fano function, the other is made by two different half q-Gaussians, used for fitting the two sides of the peak.

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