Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source
Sergey P. SuprunInstitute of Semiconductor Physics, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, RussiaV. N. SherstyakovaInstitute of Semiconductor Physics, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, RussiaE. V. FedosenkoInstitute of Semiconductor Physics, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia
2009en
ABI
Annotatsiya
Processes of the molecular-beam epitaxy of submicron layers of ZnSe on GaAs (001) substrates with the use of the ZnSe compound as the source have been investigated depending on the initial state of the substrate surface and its temperature. It is shown that after the formation of the heterointerface the “excess” Ga remains on the surface of the growing film, determining, at temperatures above 250°C, the rate of its growth. According to the experimentally measured spectra of low-temperature luminescence, the optimum temperature of obtaining layers by this method is 240°C.
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