HgCdTe-MISFET fabrication with multi-step surface passivation and quantum effects
C. H. LeeDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaSokwon PaikDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaJ. W. ParkDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaJaesun LeeDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaYoung Min MoonDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaJihun ChoiDepartment of Physics, Chungbuk National University, 360-763, Cheongju, KoreaHyun-Ok JungKorea Advanced Institute of Science and Technology, 305-338, Taejon, KoreaH. C. LeeKorea Advanced Institute of Science and Technology, 305-338, Taejon, KoreaC.-K. KimKorea Advanced Institute of Science and Technology, 305-338, Taejon, KoreaM. S. HahnDepartment of Physics, Dongguk University, 100-715, Seoul, KoreaBingwen SongDepartment of Physics, Dongguk University, 100-715, Seoul, KoreaY. B. HouDepartment of Physics, Dongguk University, 100-715, Seoul, KoreaTae Won KangDepartment of Physics, Dongguk University, 100-715, Seoul, KoreaKeunje YooKorea Research Institute of Standards and Science, 305-600, Taejon, KoreaY. T. JeoungAgency for Defense Development, 300-600, Taejon, KoreaH. K. KimAgency for Defense Development, 300-600, Taejon, KoreaJ. M. KimAgency for Defense Development, 300-600, Taejon, Korea
1998en
ABI
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