III–V semiconductor nanowires for optoelectronic device applications
Hannah J. JoyceDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, AustraliaQiang GaoDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, AustraliaHark Hoe TanDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, AustraliaC. JagadishDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, AustraliaYong KimDepartment of Physics, College of Natural Sciences, Dong-A University, Hadan 840, Sahagu, Busan 604-714, Republic of KoreaJin ZouSchool of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, QLD 4072, AustraliaLeigh M. SmithDepartment of Physics, University of Cincinnati, Cincinnati, OH 45211, USAHoward E. JacksonDepartment of Physics, University of Cincinnati, Cincinnati, OH 45211, USAJ.M. Yarrison-RiceDepartment of Physics, Miami University, Oxford, OH 45056, USAPatrick ParkinsonClarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United KingdomMichael B. JohnstonClarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
2011en
ABI
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