A new approach in impurity doping of 4H-SiC using silicidation
Chin‐Che TinDepartment of Physics, University of Malaya 1 , 50603 Kuala Lumpur, MalaysiaSuwan MendisDepartment of Physics, 206 Allison Laboratory, Auburn University 2 , Alabama 36849, USAMichelle T. TinDepartment of Pre-Professional Studies, University of Notre Dame 3 , Indiana 46556, USATamara Isaacs‐SmithDepartment of Physics, 206 Allison Laboratory, Auburn University 2 , Alabama 36849, USAJohn R. WilliamsDepartment of Physics, 206 Allison Laboratory, Auburn University 2 , Alabama 36849, USA
2013en
ABI
Annotatsiya
Oxidation and silicidation have been found to enhance phosphorus diffusion and incorporation in 4H-SiC. Depth profiling by secondary ion mass spectrometry showed significant concentration of phosphorus in the order of 1018–1019 cm−3 in the near-surface region of 4H-SiC in both oxidation and silicidation-assisted phosphorus-diffused samples. However, silicidation was remarkably more effective than oxidation in promoting phosphorus diffusion, producing comparable phosphorus concentration at even greater depth at a temperature of only 900 °C. Specific contact resistance values of the phosphorus-doped samples confirmed feasibility of this method in ohmic contact fabrication on SiC.
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