WO3 thin film prepared by PECVD technique and its gas sensing properties to NO2
Maosong TongDepartment of Electronic Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People's Republic of ChinaGuorui DaiDepartment of Electronic Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People's Republic of ChinaYuanda WuDepartment of Electronic Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People's Republic of ChinaXiuli HeDepartment of Electronic Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People's Republic of ChinaDingsan GaoDepartment of Electronic Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130023, People's Republic of China
2001en
ABI
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