Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya DasDepartment of Physics, Indian Institute of Science, Bangalore 560012, IndiaSimone PisanaDepartment of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, CB3 OFA, UKBanani ChakrabortyDepartment of Physics, Indian Institute of Science, Bangalore, 560012, IndiaS. PiscanecDepartment of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, CB3 OFA, UKSubhankar SahaDepartment of Physics, Indian Institute of Science, Bangalore, 560012, IndiaUmesh V. WaghmareTheoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, 560064, IndiaKostya S. NovoselovDepartment of Physics and Astronomy, Manchester University, Manchester, M13 9PL, UKH. R. KrishnamurthyDepartment of Physics, Indian Institute of Science, Bangalore, 560012, IndiaA. K. GeǐmDepartment of Physics and Astronomy, Manchester University, Manchester, M13 9PL, UKAndrea C. FerrariDepartment of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, CB3 OFA, UKAnil K. SoodDepartment of Physics, Indian Institute of Science, Bangalore, 560012, India
2008en
ABI
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