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Study of CZTSSe-Based Solar Cells with Different ETMs by SCAPS

Lhoussayne Et-tayaLM3ER-OTEA, Department of Physics, Faculty of Sciences and Techniques, Moulay Ismail University of Meknes, BP 509 Boutalamine, Errachidia 52000, MoroccoAbdellah BenamiLM3ER-OTEA, Department of Physics, Faculty of Sciences and Techniques, Moulay Ismail University of Meknes, BP 509 Boutalamine, Errachidia 52000, MoroccoTouria OuslimaneLM3ER-OTEA, Department of Physics, Faculty of Sciences and Techniques, Moulay Ismail University of Meknes, BP 509 Boutalamine, Errachidia 52000, Morocco

2022en

ABI

Annotatsiya

Third-generation thin-film solar cells based on CZTSSe are highly promising because of their excellent optoelectrical properties, earth-abundant, and non-toxicity of their constituent elements. In this work, the performance of CZTSSe-based solar cells with TiO2, CdS, and ZnSe as electron transporting materials (ETMs) was numerically investigated using the Solar Cell Capacitance Simulator (SCAPS). The effect of the active layer’s thickness and electron affinity, different buffer layers, and the contour plot of the operating temperature versus thickness of the CdS buffer layer were studied. The results show that the optimum power conversion efficiency for CdS, TiO2, and ZnSe, as the ETMs, is 23.16%, 23.13%, and 22.42%, respectively.

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Identifikatorlar

DOI: 10.3390/su14031916

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