Maqola

Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

J. P. CampbellSemiconductor Electronics Division, National Institute for Standards and Technology, Gaithersburg, MD, USALihua YuDepartment of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, USAKin P. CheungSemiconductor Electronics Division, National Institute for Standards and Technology, Gaithersburg, MD, USAJin QinDepartment of Mechanical Engineering, University of Maryland, College Park, MD, USAJohn S. SuehleSemiconductor Electronics Division, National Institute for Standards and Technology, Gaithersburg, MD, USAA. S. OatesTaiwan Semiconductor Manufacturing Company Limited, Hsinchu, TaiwanKuang ShengDepartment of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, USA

2009en

ABI

Annotatsiya

We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-V TH ) operation of highly scaled devices. We find that the sub-V TH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-V TH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-V TH operation is to become a viable solution for low-power applications.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.1109/icicdt.2009.5166255

Iqtiboslar va manbalar

3 ta iqtibos0 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar