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Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

Hyunki KimDepartment of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 22012, Republic of KoreaGyeong‐Nam LeeDepartment of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 22012, Republic of KoreaJoondong KimDepartment of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 22012, Republic of Korea

2018en

ABI

Annotatsiya

A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.

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Identifikatorlar

DOI: 10.1155/2018/4178989

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