On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

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