Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: On several regularities of deep levels of d-impurities in silicon

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

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2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

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   ABIABI:AkademIndex/openalex/2023.article.001522