Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal
Д. А. УсановSaratov State University, ul. Astrakhanskaya 83, Saratov, 410026, RussiaА. В. СкрипальSaratov State University Saratov RussiaN. V. UgryumovaSaratov State University, ul. Astrakhanskaya 83, Saratov, 410026, RussiaС. Б. ВенигSaratov State University, ul. Astrakhanskaya 83, Saratov, 410026, RussiaV. E. OrlovSaratov State University, ul. Astrakhanskaya 83, Saratov, 410026, Russia
2000en
ABI
Annotatsiya
Experimentally observed phenomenon of the origination of the mode of negative differential resistance and switching in a tunnel diode under the effect of external microwave signal is theoretically interpreted. The reasons for the existence of the ranges of bias voltages applied to the diode and the power levels of microwave signal for which the phenomenon is observed are clarified.
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