Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals
A. I. Veı̆ngerIoffe Institute, St. Petersburg, 194021, RussiaI. V. KochmanIoffe Institute, St. Petersburg, 194021, RussiaV. I. OkulovMikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620137, RussiaM. D. AndriichukChernivtsy National University, Chernivtsy, 58012, UkraineL. D. ParanchichChernivtsy National University, Chernivtsy, 58012, Ukraine
2018en
ABI
Annotatsiya
Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.
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