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High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Jin-Ji DaiDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanThi ThuDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanSsu-Kuan WuDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanJing-Rong PengDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanCheng-Wei LiuDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanHua‐Chiang WenDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanWu-Ching ChouDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanHan‐Chieh HoWei-Fan Wang

2021en

ABI

Annotatsiya

The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

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Identifikatorlar

DOI: 10.3390/nano11071766

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