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Multilayer MoTe<sub>2</sub> Field‐Effect Transistor at High Temperatures

Faisal AhmedDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandAbde Mayeen ShafiDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandDavid M. A. MackenzieDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandMaaz Ahmed QureshiDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandHenry A. FernándezDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandHoon Hahn YoonDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandMd Gius UddinDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandMarkku KuittinenInstitute of Photonics University of Eastern Finland P.O. Box 111 Joensuu FI‐80101 FinlandZhipei SunDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 FinlandHarri LipsanenDepartment of Electronics and Nanoengineering Aalto University P.O. Box 13500 Aalto FI‐00076 Finland

2021en

ABI

Annotatsiya

Abstract Functional 2D material‐based devices are likely subjected to high ambient temperatures when integrated into miniaturized circuits for practical applications, which may induce irreversible structural changes in materials and impact the device performance. However, majority of 2D devices’ studies focus on room temperature or low‐temperature operation conditions. Here, the high‐temperature (up to 673 K) electro‐thermal response of molybdenum ditelluride (MoTe 2 )‐based field‐effect transistors is investigated. The optimal annealing temperature of around 500–525 K for the multilayer MoTe 2 devices with two‐fold enhancement in maximum current level, field‐effect mobility, and current on‐off ratio is identified. Furthermore, MoTe 2 devices show the transition of electrical response from gate modulation to the degenerately p‐doped (hole dominant) characteristics when the operation temperature increases to ≈600 K. The gate‐dependent electro‐thermal measurements complemented by surface chemistry analysis confirm the near range hopping transport in the MoTe 2 channel at high temperature induced by thermally triggered oxidation of MoTe 2 . These results not only provide the thermal endurance limits of MoTe 2 for practical applications, but also indicate the possible applications of MoTe 2 for thermal sensing applications.

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Identifikatorlar

DOI: 10.1002/admi.202100950

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