Optical Band Gap of Wurtzite Zinc Sulphide Doped with Lanthanum Ions

Pure and doped Zinc Sulfide (ZnS) quantum dots have attracted increasing interest from researchers working on various scientific and engineering applications in electronics, nonlinear optical devices for communication, and optical computers. In this study, ZnS nanoparticles doped with lanthanum (ZnS:La) with approximately 11 nm size was produced at 150°C by chemical precipitation route. Zinc Sulphide is an extensively studied group II-VI semiconductor with wide application in field of Photo Luminescence (PL),Electro Luminescence(EL) and Cathodo Luminescence (CL). It is an excellent light transmission material with high refractive index 2.27. XRD, SEM, FTIR UV-Vis and EDS characterize the samples.In this study, the UV–Visible absorption spectra of ZnS:La showed a red shift in the absorption shoulder compared with the spectra of undoped samples. ZnS nanoparticles could be doped with lanthanum ions during synthesis without altering the X-ray diffraction (XRD) patterns of ZnS. Also, the XRD pattern of the powders showed cubic crystal structures for ZnS:La. The Optical band gap has been found to be 2.7 eV. It was found that energy Band gap Eg decreases with doping of La.

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