Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution
Ho-Ki LyeoCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USAAlexander A. KhajetooriansCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USALi ShiCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USAKevin P. PipeCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USARajeev J. RamCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USAAli ShakouriCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USAC. K. ShihCenter for Nano and Molecular Science and Technology, University of Texas, Austin, TX 78712, USA
2004en
ABI
Annotatsiya
We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can profile with nanometer spatial resolution the thermoelectric power, band structures, and carrier concentrations of semiconductor junctions that constitute the building blocks of thermoelectric, electronic, and optoelectronic devices.
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