The electrical properties of a solar cell with multiple nanoscale p-n transitions
T. A. DzhalalovTashkent University of Information Technology, Tashkent, UzbekistanE. Z. ImamovTashkent University of Information Technology, Tashkent, UzbekistanР. А. МуминовTashkent University of Information Technology, Tashkent, Uzbekistan
ABI
Annotatsiya
In the present work a theoretical model of the formation of a spatial charge zone in a fundamentally new contact structure that consists of a semi-conducting base with nanoinclusions on its surface is developed. The character of the new contact type is found to be fully defined by the electric capacity of the nanoinclusion, C 0. The difference between the properties of the new contact type in both structure and length and the analogous contact features that are typical for Schottki barriers, continuous p-n transitions, and heterotransitions is shown.
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