High Pressure Raman Study of Layered Semiconductor Tlgase<sub>2</sub>
S. H. JabarovInstitute of Physics, Baku , AzerbaijanV. B. AliyevaInstitute of Physics, Baku , AzerbaijanT. G. MammadovInstitute of Physics, Baku , AzerbaijanА. И. МаммадовInstitute of Physics, Baku , AzerbaijanС. Е. КичановJoint Institute for Nuclear Research, Dubna , RussiaLeonid DubrovinskyBayerisches Geoinstitut, University Bayreuth, Bayreuth , GermanyS. S. BabayevInstitute of Physics, Baku , AzerbaijanE.G. PashayevaInstitute of Physics, Baku , AzerbaijanN. T. DangInstitute of Research and Development, Duy Tan University, Da Nang , Vietnam
2018en
ABI
Annotatsiya
Abstract Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe 2 were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe 2 . The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe 2 . It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe 2 is similar
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