Doping Up the Light: A Review of A/B-Site Doping in Metal Halide Perovskite Nanocrystals for Next-Generation LEDs
Ying LuInstitute for Materials Discovery, University College London, Malet Place, London WC1E 7JE, United KingdomFiroz AlamDepartment of Electronic and Electrical Engineering, University College London, London WC1E 6BT, United KingdomJavad ShamsiCavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United KingdomMojtaba Abdi‐JalebiInstitute for Materials Discovery, University College London, Malet Place, London WC1E 7JE, United Kingdom
2024en
ABI
Annotatsiya
. Nevertheless, B-site doping of PeNCs has a more significant impact on the bandgap level through modification of surface defect states. In this perspective, we delve into the synthesis of PeNCs with A/B-site doping and their impacts on the structural and optoelectronic properties, as well as their impacts on the performance of subsequent PeLEDs. Furthermore, we explore the A-site and B-site doping mechanisms and the impact of device architecture on doped PeNCs to maximize the performance and stability of PeLEDs. This work presents a comprehensive overview of the studies on A-site and B-site doping in PeNCs and approaches to unlock their full potential in the next generation of LEDs.
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