Optically pumped lasing of ZnO at room temperature
Darren M. BagnallInstitute of Material Research, Tohoku University 2-1-1 Katahira, Aoba-ku, 980 Sendai, JapanY. F. ChenInstitute of Material Research, Tohoku University 2-1-1 Katahira, Aoba-ku, 980 Sendai, JapanZ. Q. ZhuInstitute of Material Research, Tohoku University 2-1-1 Katahira, Aoba-ku, 980 Sendai, JapanT. YaoInstitute of Material Research, Tohoku University 2-1-1 Katahira, Aoba-ku, 980 Sendai, JapanS. KoyamaDepartment of Physics, Tohoku University, Sendai 980, JapanMengyan ShenDepartment of Physics, Tohoku University, Sendai 980, JapanT. GotoDepartment of Physics, Tohoku University, Sendai 980, Japan
1997en
ABI
Annotatsiya
We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.
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