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37 ta ish

Ish: Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

  1. Radiation effects in semiconductors

    J. W. Corbett, G. D. Watkins

    Kitob19717 iqtibos
    ABI

  2. Microcomputer program for analysis of positron annihilation lifetime spectra

    J. Kansy

    Maqola19966 iqtibos
    ABI

  3. Positron Annihilation in Semiconductors

    R. Krause‐Rehberg, Hartmut S. Leipner

    Kitob19996 iqtibos
    ABI

  4. Defect spectroscopy with positrons: a general calculational method

    M. J. Puska, R M Nieminen

    Maqola19835 iqtibos
    ABI

  5. Positrons in Solids

    P. Hautojärvi

    Kitob19795 iqtibos
    ABI

  6. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

    В. П. Маркевич, I.D. Hawkins, А. R. Peaker +5

    Maqola20044 iqtibos
    ABI

  7. Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

    Mohamed Elsayed, R. Krause‐Rehberg, W. Anwand +2

    Maqola20113 iqtibos
    ABI

  8. Theoretical and experimental study of positron annihilation with core electrons in solids

    M. Alatalo, B. Barbiellini, Mikko Hakala +6

    Maqola19963 iqtibos
    ABI

  9. Shallow positron traps in GaAs

    K. Saarinen, P. Hautojärvi, A. Vehanen +2

    Maqola19893 iqtibos
    ABI

  10. Lattice defects in semiconductors

    Ryukichi Hashiguchi

    Kitob19683 iqtibos
    ABI

  11. Divacancy clustering in neutron-irradiated and annealed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type germanium

    K. Kuitunen, Filip Tuomisto, J. Slotte +1

    Maqola20082 iqtibos
    ABI

  12. Observation of Irradiation-Induced Interstitial Copper Impurity in Germanium

    Akio Hiraki, J. W. Cleland, J. H. Crawford

    Maqola19672 iqtibos
    ABI

  13. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

    Miki Naganawa, Yasuo Shimizu, Masashi Uematsu +4

    Maqola20082 iqtibos
    ABI

  14. Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

    A. Giese, N. A. Stolwijk, H. Bracht

    Maqola20002 iqtibos
    ABI

  15. Deep level defects produced by electron irradiation and their annealings in undoped germanium

    Kazuyoshi Ito, Takashi Ito, K. Mizuno

    Maqola19862 iqtibos
    ABI

  16. Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium

    N. Fukuoka, H. Yamaji, M. Honda +1

    Maqola19922 iqtibos
    ABI

  17. Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

    Mohamed Elsayed, R. Krause‐Rehberg, B. Korff +2

    Maqola20132 iqtibos
    ABI

  18. Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium

    Noboru Fukuoka, Haruo Saito, J. W. Cleland

    Maqola19802 iqtibos
    ABI

  19. Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mprescripts/><mml:mrow/><mml:mrow><mml:mn>70</mml:mn></mml:mrow><mml:mrow/><mml:mrow/></mml:mmultiscripts></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:mrow><mml:mn>74</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>Ge isotope heterostructures: An approach to self-diffusion studies

    H. D. Fuchs, W. Walukiewicz, E. E. Häller +6

    Maqola19952 iqtibos
    ABI

  20. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium

    Martin Werner, H. Mehrer, H. D. Hochheimer

    Maqola19852 iqtibos
    ABI

  21. Direct observations of the vacancy and its annealing in germanium

    J. Slotte, Simo Kilpeläinen, Filip Tuomisto +2

    Maqola20112 iqtibos
    ABI

  22. Production and annealing of electron irradiation damage in ZnO

    D. C. Look, D. C. Reynolds, J. W. Hemsky +2

    Maqola19992 iqtibos
    ABI

  23. General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

    S. M. Hu

    Maqola19692 iqtibos
    ABI

  24. Divacancy defects in germanium studied using deep-level transient spectroscopy

    M. Christian Petersen, A. Nylandsted Larsen, A. Mesli

    Maqola20102 iqtibos
    ABI

  25. Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

    V. Ranki, A. Pelli, K. Saarinen

    Maqola20042 iqtibos
    ABI