Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

High-spatial-frequency periodic structures on the surfaces of InP, GaP, and GaAs have been observed after multiple-pulse femtosecond laser irradiation at wavelengths in the transparency regions of the respective solids. The periods of the structures are substantially shorter than the wavelengths of the incident laser fields in the bulk materials. In contrast, high-frequency structures were not observed for laser photon energies above the band gaps of the target materials.

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