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Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

Chun-You WeiDepartment of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, TaiwanChu-Hsuan LinDepartment of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, TaiwanHao-Tse HsiaoDepartment of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, TaiwanPo-Chuan YangChih‐Ming WangDepartment of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, TaiwanYen-Chih PanDepartment of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan

2013en

ABI

Annotatsiya

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

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Identifikatorlar

DOI: 10.3390/ma6115440

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