Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation
A. V. EmelyanovM.V. Lomonosov Moscow State University, Physics Department, Moscow, RussiaА.Г. КазанскийM.V. Lomonosov Moscow State University, Physics Department, Moscow, RussiaMark KhenkinM.V. Lomonosov Moscow State University, Physics Department, Moscow, RussiaП. А. ФоршM.V. Lomonosov Moscow State University, Physics Department, Moscow, RussiaП. К. КашкаровM.V. Lomonosov Moscow State University, Physics Department, Moscow, RussiaMindaugas GecevičiusOptoelectronics Research Centre, University of Southampton, Southampton, United KingdomMartynas BeresnaOptoelectronics Research Centre, University of Southampton, Southampton, United KingdomPeter G. KazanskyOptoelectronics Research Centre, University of Southampton, Southampton, United Kingdom
2012en
ABI
Annotatsiya
Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.
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