Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems
Б. Е. УмирзаковInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durman yuli 33, Tashkent, 100125, UzbekistanЗ. А. ИсахановInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durman yuli 33, Tashkent, 100125, UzbekistanМ. К. РузибаеваInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durman yuli 33, Tashkent, 100125, UzbekistanZ. E. MukhtarovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durman yuli 33, Tashkent, 100125, UzbekistanA. S. KhalmatovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durman yuli 33, Tashkent, 100125, Uzbekistan
ABI
Annotatsiya
We report on the results of analysis of the composition, crystal structure, and profiles of atomic distribution over the depth of a free Cu (100) film with coated with Si nanofilms with various thicknesses. It is shown that for silicon film thickness d Si = 5.0 nm, silicon and copper atoms form a Cu x Si y -type compound. With increasing film thickness (d Si > 5.0 nm), a silicon film is formed on the silicides surface. After heating, a transition layer of Cu2Si3 silicide of thickness d = 8.0–10.0 nm is formed on the Si/Cu interface.
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