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Magnetoresistance and Hall effect in a disordered two-dimensional electron gas

B. L. AltshulerLeningrad Nuclear Physics Institute, Gatchina, Leningrad 688350 USSRD. Khmel'nitzkiiLeningrad Nuclear Physics Institute, Gatchina, Leningrad 688350 USSRA. I. LarkinLeningrad Nuclear Physics Institute, Gatchina, Leningrad 688350 USSRP. A. LeeLeningrad Nuclear Physics Institute, Gatchina, Leningrad 688350 USSR
1980en
ABI

Annotatsiya

Two models of disorder in two dimensions are discussed. The first is a localization theory that treats noninteracting particles by perturbation theory in the weak scattering limit. A weak magnetic field is found to have strong effects on the previously predicted logarithmic rise in resistivity at low temperatures. No logarithmic divergence is found for the Hall constant. A second model treats the disorder scattering by conventional diagramatic technique but includes the effects of interactions. In a short communication it has previously been reported that the resistivity and Hall constant both show a logarithmic increase at low temperatures. The details of the calculation are reported here, together with an extension to thin wires which shows a ${T}^{\ensuremath{-}\frac{1}{2}}$ divergence in the resistivity.

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