On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

The theoretical treatment of dc forward-biased n+–n–n+ and p+–n–n+ semiconductor diode structures is obtained for the case of strong carrier accumulation resulting in a field-opposed diffusion in the n-base region. The ambipolar drift is limited by the injection modulation of population of deep compensating traps Nt and the well defined distinctive current saturation (sublinear region on I–V curve) of the type V(I) ∼ Vo exp [A(Φ, ΔT) I] occurs. Just in this saturation region the topic voltage resposivity to temperature variations ΔT and incident photoexcitation Φ must be reached. The agreement of the developed theory with GaAs n+–n–n+ structure properties is discussed. [Russian Text Ignored].

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