Solid-state image converters on the basis of the GaAs/ZnS structures
V. M. KalyginaSiberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, Tomsk, 634050, RussiaА. V. ТyazhevSiberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, Tomsk, 634050, RussiaТ. М. YaskevichSiberian Physicotechnical Institute, Tomsk State University, pr. Lenina 36, Tomsk, 634050, Russia
2009en
ABI
Annotatsiya
Emission-voltage characteristics and frequency dependences of the luminescence intensity of electroluminescent capacitors on the basis of the ZnS:(Cu,Al) phosphor are studied. The effect of X-ray radiation (17 keV) on the high-resistivity GaAs layers obtained by three methods is studied. The possibility to develop the detectors of the ionizing radiation with optical reading of information with the use of the GaAs/ZnS structures is shown using a mathematical simulation. It is noted that the most promising material for the development of the solid-state image converters is GaAs:Cr obtained by diffusion of Cr from the deposited layer.
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