Maqola

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

M. Ashrya Radiation Engineering Department , National Center for Radiation Research and Technology, Atomic Energy Authority , EgyptMohamed B. El-Mashadeb Electrical Engineering Department, Faculty of Engineering , Azhar University , EgyptSobhy M. El-Adla Radiation Engineering Department , National Center for Radiation Research and Technology, Atomic Energy Authority , EgyptM.S.I. Rageha Radiation Engineering Department , National Center for Radiation Research and Technology, Atomic Energy Authority , Egypt

2004en

ABI

Annotatsiya

Abstract Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications. Keywords: Optoelectronic integrated deviceOptical functional deviceOptical amplification modeOptical switching mode

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Identifikatorlar

DOI: 10.1080/10420150410001670297

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