ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect
Joondong KimNano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon, Korea. [email protected]Ju‐Hyung YunNano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, KoreaChang‐Hyun KimDepartment of Chemistry, Korea University, Jochiwon 339700, KoreaYun Chang ParkMeasurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806, KoreaJu Yeon WooNano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305343, KoreaJeunghee ParkDepartment of Chemistry, Korea University, Jochiwon 339700, KoreaJung‐Ho LeeDepartment of Materials and Chemical Engineering, Hanyang University, Ansan 426791, KoreaJunsin YiSchool of Information and Communication Engineering, Sungkyunkwan University,#N#Suwon 440746,#N#KoreaChang‐Soo HanNano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials#N#(KIMM), Daejeon 305343,#N#Korea
2010en
ABI
Annotatsiya
A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.
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